TY - CONF
T1 - A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM
JO - Microscopy of Semiconducting Materials
PY - 2005/01/01
AU - Chang ACK
AU - Norris DJ
AU - Ross IM
AU - Cullis AG
AU - Olsen SH
AU - O'Neill AG
ED - Cullis AG
ED - Hutchison JL
VL - 107
SP - 111
EP - 114
Y2 - 2025/07/16
ER -