TY - JOUR T1 - Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy JO - Electronics Letters PY - 2005/01/01 AU - Kauer M AU - Hooper SE AU - Bousquet V AU - Johnson K AU - Zellweger C AU - Barnes JM AU - Windle J AU - Smeeton TM AU - Heffernan J ED - DO - DOI: 10.1049/el:20051430 PB - Institution of Engineering and Technology (IET) VL - 41 IS - 13 SP - 739 EP - 739 Y2 - 2025/05/22 ER -